KTC4377_03 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTC4377
EPITAXIAL PLANAR NPN TRANSISTOR
STROBO FLASH APPLICATION.
HIGH CURRENT APPLICATION.
FEATURES
High DC Current Gain and Excellent h_FE Linearity
: h_FE(1)=140 600(V_CE=1V, I_C=0.5A)
: h_FE(2)=70(Min.), 140(Typ.) (V_CE=1V, I_C=2A).
Low Saturation Voltage
: V_CE(sat)=0.5V(Max.) (I_C=2A, I_B=50mA).
Small Flat Package.
1W (Mounted on Ceramic Substrate).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
30
Collector-Emitter Voltage
V_CES
30
V_CEO
10
Emitter-Base Voltage
V_EBO
6
DC
I_C
2
Collector Current
Pulse (Note 1)
I_CP
4
DC
I_B
0.4
Base Current
Pulse (Note 1)
I_BP
0.8
Collector Power Dissipation
P_C
500
P_C*
1
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
Note 1 : Pulse Width 10mS, Duty Cycle 30%
P_C* : KTC4377 mounted on ceramic substrate (250mm²x0.8t)
UNIT
V
V
V
A
A
mW
W
A
C
H
G
D
D
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
h_FE Rank
Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation-Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h_FE(1) Classification A:140~240,
I_CBO
V_CB=30V, I_E=0
I_EBO
V_EB=6V, I_C=0
V_(BR)CEO
I_C=10mA, I_B=0
V_(BR)EBO
I_E=1mA, I_C=0
h_FE(1) (Note1) V_CE=1V, I_C=0.5A
h_FE(2)
V_CE=1V, I_C=2A
V_CE(sat)
I_C=2A, I_B=50mA
V_BE
V_CE=1V, I_C=2A
f_T
V_CE=1V, I_C=0.5A
C_ob
V_CB=10V, I_E=0, f=1MHz
B:200~330, C:300~450, D:420~600
MIN.
-
-
10
6
140
70
-
-
-
-
TYP.
-
-
-
-
-
140
0.2
0.86
150
27
MAX.
100
100
-
-
600
-
0.5
1.5
-
-
UNIT
nA
nA
V
V
V
V
MHz
pF
2003. 9. 16
Revision No : 4
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