KTC4376_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES
1W (Mounted on Ceramic Substrate).
Small Flat Package.
Complementary to KTA1664.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
35
Collector-Emitter Voltage
V_CEO
30
Emitter-Base Voltage
V_EBO
5
Collector Current
I_C
800
Base Current
I_B
160
Collector Power Dissipation
P_C
500
P_C*
1
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
P_C* : KTC4376 mounted on ceramic substrate (250mm²x0.8t)
UNIT
V
V
V
mA
mA
mW
W
KTC4376
EPITAXIAL PLANAR NPN TRANSISTOR
A
C
H
G
D
D
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
h_FE Rank
Lot No.
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
V_(BR)CEO
h_FE(1) (Note)
h_FE(2)
V_CE(sat)
V_BE
f_T
V_CB=35V, I_E=0
V_EB=5V, I_C=0
I_C=10mA, I_B=0
V_CE=1V, I_C=100mA
V_CE=1V, I_C=700mA
I_C=500mA, I_B=20mA
V_CE=1V, I_C=10mA
V_CE=5V, I_C=10mA
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Note : h_FE Classification O:100 200, Y:160 320
1998. 6. 15
Revision No : 2
MIN.
-
-
30
100
35
-
0.5
-
-
TYP.
-
-
-
-
-
-
-
120
13
MAX.
100
100
-
320
-
0.5
0.8
-
-
UNIT
nA
nA
V
V
V
MHz
pF
1/2