KTC4375_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SEMICONDUCTOR
TECHNICAL DATA
KTC4375
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURES
h1W (Mounted on Ceramic Substrate).
hSmall Flat Package.
hComplementary to KTA1663.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
30
Collector-Emitter Voltage
V_CEO
30
Emitter-Base Voltage
V_EBO
5
Collector Current
I_C
1.5
Base Current
I_B
0.3
Collector Power Dissipation
P_C
500
P_C*
1
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
P_C* : KTC4375 mounted on ceramic substrate (250mm²x0.8t)
UNIT
V
V
V
A
A
mW
W


A
C
H
L
M
N
D
D
K
FF
123
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
G
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1.40 +_ 0.10
0.19 +_ 0.10
0.47 +_ 0.10
SOT-89
Marking
h_FE Rank
Lot No.
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
Collector-Emitter Breakdown Voltage
V_(BR)CEO
Emitter-Base Breakdown Voltage
V_(BR)EBO
DC Current Gain
h_FE (Note)
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter Voltage
V_BE
Transition Frequency
f_T
Collector Output Capacitance
C_ob
Note : h_FE Classification O:100q200, Y:160q320
TEST CONDITION
V_CB=30V, I_E=0
V_EB=5V, I_C=0
I_C=10mA, I_B=0
I_E=1mA, I_C=0
V_CE=2V, I_C=500mA
I_C=1.5A, I_B=0.03A
V_CE=2V, I_C=500mA
V_CE=2V, I_C=500mA
V_CB=10V, I_E=0, f=1MHz
2013.1.29
Revision No : 4
MIN.
-
-
30
5
100
-
-
-
-
TYP.
-
-
-
-
-
-
-
120
-
MAX.
100
100
-
-
320
2.0
1.0
-
40
UNIT
nA
nA
V
V
V
V
MHz
pF
1/2