KTC4370_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SEMICONDUCTOR
TECHNICAL DATA
KTC4370/A
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION.
FEATURES
High Transition Frequency : f_T=100MHz(Typ.).
Complementary to KTA1659/A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base
Voltage
KTC4370
KTC4370A
Collector-Emitter
Voltage
KTC4370
KTC4370A
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
160
180
160
180
5
1.5
0.15
20
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
L
L
M
D
D
NN
C
DIM MILLIMETERS
A
10.0+_ 0.3
B
15.0+_ 0.3
C
2.70 +_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_ 0.2
F
3.0+_ 0.3
G
12.0+_ 0.3
H
0.5+0.1/-0.05
J
13.6 +_ 0.5
R
K
3.7+_ 0.2
L
1.2+0.25/-0.1
M
1.5+0.25/-0.1
N
2.54 +_ 0.1
P
6.8+_ 0.1
Q
4.5 +_ 0.2
R
2.6 +_0.2
H
S
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
Collector-Emitter
Breakdown Voltage
KTC4370
KTC4370A
V_(BR)CEO
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
h_FE (Note)
V_CE(sat)
V_BE
f_T
Collector Output Capacitance
Note : h_FE Classification O:70~140,
C_ob
Y:120~240
TEST CONDITION
V_CB=160V, I_E=0
V_EB=5V, I_C=0
I_C=10mA, I_B=0
V_CE=5V, I_C=100mA
I_C=500mA, I_B=50mA
V_CE=5V, I_C=500mA
V_CE=10V, I_C=100mA
V_CB=10V, I_E=0, f=1MHz
MIN.
-
-
160
180
70
-
-
-
-
TYP.
-
-
-
-
-
-
-
100
25
MAX.
1.0
1.0
-
-
240
1.5
1.0
-
-
UNIT
A
A
V
V
V
MHz
pF
2007. 5. 22
Revision No : 2
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