KTC4369_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTC4369
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
Good Linearity of h_FE.
Complementary to KTA1658.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
Storage Temperature Range
T_stg
RATING
30
30
5
3
0.3
15
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
L
L
M
D
D
NN
C
DIM MILLIMETERS
A
10.0+_ 0.3
B
15.0+_ 0.3
C
2.70 +_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_ 0.2
F
3.0+_ 0.3
G
12.0+_ 0.3
H
0.5+0.1/-0.05
J
13.6 +_ 0.5
R
K
3.7+_ 0.2
L
1.2+0.25/-0.1
M
1.5+0.25/-0.1
N
2.54 +_ 0.1
P
6.8+_ 0.1
Q
4.5 +_ 0.2
R
2.6 +_0.2
H
S
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
I_CBO
I_EBO
V_(BR)CEO
DC Current Gain
h_FE(1) (Note)
h_FE(2)
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter Voltage
V_BE
Transition Frequency
f_T
Collector Output Capacitance
C_ob
Note : h_FE(1) Classification O:70~140, Y:120~240
TEST CONDITION
V_CB=20V, I_E=0
V_EB=5V, I_C=0
I_C=10mA, I_B=0
V_CE=2V, I_C=0.5A
V_CE=2V, I_C=2.5A
I_C=2A, I_B=0.2A
V_CE=2V, I_C=0.5A
V_CE=2V, I_C=0.5A
V_CB=10V, I_E=0, f=1MHz
MIN.
-
-
30
70
25
-
-
-
-
TYP.
-
-
-
-
-
0.3
0.75
100
35
MAX.
1.0
1.0
-
240
-
0.8
1.0
-
-
UNIT
A
A
V
V
V
MHz
pF
2007. 5. 22
Revision No : 2
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