KTC4081_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
hGood Linerarity of f_T.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
30
25
4
50
25
100
150
-55q150
UNIT
V
V
V
mA
mA
mW


KTC4081
EPITAXIAL PLANAR NPN TRANSISTOR
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2
B
1.25+_ 0.15
1
3
C
0.90+_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
P
H 0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
H
M
0.70
0.42 +_0.10
N
K
N
N
0.10 MIN
P
0.1 MAX
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
Type Name
HH
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Saturation
Voltage
Collector-Emitter
Base-Emitter
Collector Output Capacitance
Collector-Base Time Constant
Transition Frequency
I_CBO
I_EBO
V_(BR)CEO
h_FE
V_CE(sat)
V_BE(sat)
C_ob
C_Chrbb’
f_T
TEST CONDITION
V_CB=30V, I_E=0
V_EB=3V, I_C=0
I_C=10mA, I_B=0
V_CE=10V, I_C=10mA
I_C=15mA, I_B=1.5mA
V_CB=10V, I_E=0, f=1MHz
V_CB=10V, I_E=-1mA, f=30MHz
V_CE=10V, I_C=10mA
2008. 8. 29
Revision No : 3
MIN.
-
-
25
20
-
-
-
-
250
TYP.
-
-
-
70
-
-
1.1
-
600
MAX.
0.1
0.1
-
200
0.2
1.5
1.6
25
-
UNIT
ǺA
ǺA
V
V
pF
pS
MHz
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