KTC4080_15 Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
hSmall Reverse Transfer Capacitance
: C_re=0.7pF(Typ.)
hLow Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_stg
RATING
40
30
4
20
-20
100
150
-55q150
UNIT
V
V
V
mA
mA
mW


KTC4080
EPITAXIAL PLANAR NPN TRANSISTOR
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2
B
1.25+_ 0.15
1
3
C
0.90+_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
P
H 0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
H
M
0.70
0.42 +_0.10
N
K
N
N
0.10 MIN
P
0.1 MAX
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
h_FE Rank
Type Name
Q
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=18V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=4V, I_C=0
DC Current Gain
h_FE (Note) V_CE=6V, I_C=1mA
Reverse Transfer Capacitance
C_re
V_CB=6V, f=1MHz
Transition Frequency
f_T
V_CE=6V, I_C=1mA
Collector-Base Time Constant
C_Chrbb^’ V_CB=6V, I_E=-1mA, f=30MHz
Noise Figure
Power Gain
NF
V_CC=6V, I_E=-1mA, f=100MHz (Fig.)
G_pe
Note : h_FE Classification R(1):40q80, O(2):70q140, Y(4):100q200
MIN.
-
-
40
-
300
-
-
15
TYP.
-
-
-
0.7
550
-
2.5
18
MAX.
0.5
0.5
200
-
-
30
5.0
-
UNIT
ǺA
ǺA
pF
MHz
pS
dB
2008. 8. 29
Revision No : 4
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