KTC4080E_15 Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
hSmall Reverse Transfer Capacitance
: C_re=0.7pF(Typ.)
hLow Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
KTC4080E
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
Storage Temperature Range
T_stg
RATING
40
30
4
20
-20
100
150
-55q150
UNIT
V
V
V
mA
mA
mW


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Reverse Transfer Capacitance
Transition Frequency
Collector-Base Time Constant
Noise Figure
Power Gain
I_CBO
I_EBO
h_FE(Note)
C_re
f_T
C_Chrbb^’
NF
G_pe
V_CB=18V, I_E=0
V_EB=4V, I_C=0
V_CE=6V, I_C=1mA
V_CE=6V, f=1MHz
V_CE=6V, I_C=1mA
V_CB=6V, I_E=-1mA, f=30MHz
V_CC=6V, I_E=-1mA
f=100MHz (Fig.)
Note : h_FE Classification R(1):40q80 , O(2):70q140 , Y(4):100q200
2014. 3. 31
Revision No : 2
MIN.
-
-
40
-
300
-
-
15
TYP.
-
-
-
0.7
550
-
2.5
18
MAX.
0.5
0.5
200
-
-
30
5.0
-
UNIT
ǺA
ǺA
pF
MHz
pS
dB
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