KTC4077_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
hHigh Voltage : V_CEO=120V.
hExcellent h_FE Linearity
: h_FE(0.1mA)/h_FE(2mA)=0.95(Typ.).
hHigh h_FE: h_FE=200q700.
hLow Noise : NF=1dB(Typ.), 10dB(Max.).
hComplementary to KTA2017.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current
I_C
Base Current
I_B
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
120
120
5
100
20
100
150
-55q150
UNIT
V
V
V
mA
mA
mW


KTC4077
EPITAXIAL PLANAR NPN TRANSISTOR
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2
B
1.25+_ 0.15
1
3
C
0.90+_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
P
H 0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
H
M
0.70
0.42 +_0.10
N
K
N
N
0.10 MIN
P
0.1 MAX
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
h_FE Rank
Type Name
D
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=120V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=5V, I_C=0
DC Current Gain
h_FE (Note) V_CE=6V, I_C=2mA
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=10mA, I_B=1mA
Transition Frequency
f_T
V_CE=6V, I_C=1mA
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Noise Figure
V_CE=6V, I_C=0.1mA
NF
f=1kHz, Rg=10kʃ
Note : h_FE Classification GR(6):200q400 BL(8):350q700
2008. 8. 29
Revision No : 3
MIN.
-
-
200
-
-
-
TYP.
-
-
-
-
100
4.0
MAX.
0.1
0.1
700
0.3
-
-
UNIT
ǺA
ǺA
V
MHz
pF
-
1.0
10
dB
1/2