KTC4076_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SEMICONDUCTOR
TECHNICAL DATA
KTC4076
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hExcellent h_FE Linearity
: h_FE(2)=25(Min.) at V_CE=6V, I_C=400mA.
hComplementary to KTA2015.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current
I_C
Base Current
I_B
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
35
30
5
500
50
100
150
-55q150
UNIT
V
V
V
mA
mA
mW


E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2
B
1.25+_ 0.15
1
3
C
0.90+_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
P
H 0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
H
M
0.70
0.42 +_0.10
N
K
N
N
0.10 MIN
P
0.1 MAX
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
h_FE Rank
Type Name
W
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE
f_T
V_CB=35V, I_E=0
V_EB=5V, I_C=0
V_CE=1V, I_C=100mA
V_CE=6V, I_C=400mA
I_C=100mA, I_B=10mA
V_CE=1V, I_C=100mA
V_CE=6V, I_C=20mA
Collector Output Capacitance
C_ob
V_CB=6V, I_E=0, f=1MHz
(Note) : h_FE(1) Classification O(2):70q140 Y(4):120q240
h_FE(2) Classification O:25Min. Y:40Min.
MIN.
-
-
70
25
-
-
-
-
TYP.
-
-
-
-
0.1
0.8
300
7.0
MAX.
0.1
0.1
240
-
0.25
1.0
-
-
UNIT
ǺA
ǺA
V
V
MHz
pF
2008. 8. 29
Revision No : 4
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