KTC4075E Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌExcellent h_FE Linearity
: h_FE(0.1mA)/h_FE(2mA)=0.95(Typ.).
ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.).
ᴌComplementary to KTA2014E.
ᴌSmall Package.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
60
50
5
150
30
100
150
-55ᴕ150
UNIT
V
V
V
mA
mA
mW
á´±
á´±
KTC4075E
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
DIM MILLIMETERS
2
D
A
1.60+_ 0.10
B
0.85+_ 0.10
1
3
C
0.70+_ 0.10
D 0.27+0.10/-0.05
E
1.60+_ 0.10
G
1.00+_ 0.10
H
0.50
J
0.13+_ 0.05
J
1. EMITTER
2. BASE
3. COLLECTOR
ESM
Marking
L
Type Name
h_FE Rank
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=60V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=5V, I_C=0
DC Current Gain
h_FE (Note) V_CE=6V, I_C=2mA
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=100mA, I_B=10mA
Transition Frequency
f_T
V_CE=10V, I_C=1mA
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Noise Figure
NF
V_CE=6V, I_C=0.1mA,
f=1kHz, Rg=10ká½µ
Note : h_FE Classification O(2):70ᴕ140, Y(4):120ᴕ240, GR(6):200ᴕ400, BL(8):350~700
MIN.
-
-
70
-
80
-
-
TYP.
-
-
-
0.1
-
2.0
1.0
MAX.
0.1
0.1
700
0.25
-
3.5
UNIT
ỌA
ỌA
V
MHz
pF
10
dB
2001. 12. 5
Revision No : 1
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