KTC4072V Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
FEATURES
ᴌHigh Current.
ᴌLow V_CE(sat).
: V_CE(sat)á´ª250mV at I_C=200mA/I_B=10mA.
ᴌComplementary to KTA2012V.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Single pulse Pw=1mS.
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP *
P_C
T_j
T_stg
RATING
15
12
6
500
1
100
150
-55ᴕ150
UNIT
V
V
V
mA
A
mW
á´±
á´±
KTC4072V
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
2
DIM MILLIMETERS
A
1.2 +_0.05
B
0.8 +_0.05
1
3
C
0.5 +_ 0.05
D
0.3 +_ 0.05
E
1.2 +_ 0.05
G
0.8 +_ 0.05
P
P
H
0.40
J
0.12+_ 0.05
K
0.2 +_ 0.05
P
5
1. EMITTER
2. BASE
3. COLLECTOR
VSM
Marking
Type Name
LZ
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
I_CBO
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
h_FE
V_CE(sat)
f_T
Collector Output Capacitance
C_ob
TEST CONDITION
V_CB=15V, I_E=0
I_C=10ỌA
I_C=1mA
I_E=10ỌA
V_CE=2V, I_C=10mA
I_C=200mA, I_B=10mA
V_CE=2V, I_C=10mA, f_T=100MHz
V_CB=10V, I_E=0, f=1MHz
MIN.
-
15
12
6
270
-
-
-
TYP.
-
-
-
-
-
90
320
7.5
MAX.
100
-
-
-
680
250
-
-
UNIT
nA
V
V
V
-
mV
MHz
pF
2002. 2. 20
Revision No : 2
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