KTC3964 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
Switching Applications
Solenoid Drive Applications
Temperature Compensated for Audio Amplifier Output Stage
FEATURES
High DC current gain : h_FE = 500(min) (I_C=400mA)
Low Collector emitter saturation voltage : V_CE(sat)=0.5V(max)
(I_C=300mA)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
Storage Temperature Range
T_stg
RATING
40
40
7
2
1.5
150
-55 150
UNIT
V
V
V
A
W
KTC3964
EPITAXIAL PLANAR NPN TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
N
O
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
V_(BR)CEO
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_ob
Turn On Time
t_on
Switching
Storage Time
t_stg
Time
Fall Time
t_f
TEST CONDITION
V_CB=40V, I_E=0
V_EB=7V, I_C=0
I_C=10mA, I_B=0
V_CE=1V, I_C=400mA
I_C=300mA, I_B=1mA
I_C=300mA, I_B=1mA
V_CE=2V, I_C=100mA
V_CB=10V, I_E=0, f=1MHz
20µsec
INPUT ^IB1
I_B1
I_B2
I_B2
OUTPUT
I_B1=-I _B2 =-1mA, DUTY CYCLE <= 1% V_CC=30V
MIN.
-
-
40
500
-
-
-
-
-
-
-
TYP.
-
-
-
-
0.3
-
220
20
MAX.
10
1
-
-
0.5
1.1
-
-
UNIT
A
A
V
V
V
MHz
pF
1.0
-
3.0
-
S
1.2
-
2007. 3. 29
Revision No : 1
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