KTC3911S_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
hHigh Voltage : V_CEO=120V.
hExcellent h_FE Linearity
: h_FE(0.1mA)/h_FE(2mA)=0.95(Typ.).
hHigh h_FE: h_FE=200q700.
hLow Noise : NF=1dB(Typ.), 10dB(Max.).
hComplementary to KTA1517S.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
Storage Temperature Range
T_stg
RATING
120
120
5
100
20
150
150
-55q150
UNIT
V
V
V
mA
mA
mW


KTC3911S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
h_FE Rank
AD ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=120V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=5V, I_C=0
DC Current Gain
h_FE (Note) V_CE=6V, I_C=2mA
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=10mA, I_B=1mA
Transition Frequency
f_T
V_CE=6V, I_C=1mA
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Noise Figure
Note : h_FE Classification
GR(G):200q400
V_CE=6V, I_C=0.1mA
NF
f=1kHz, Rg=10kʃ
BL(L):350q700
MIN.
-
-
200
-
-
-
TYP.
-
-
-
-
100
4.0
MAX.
0.1
0.1
700
0.3
-
-
UNIT
ǺA
ǺA
V
MHz
pF
-
1.0
10
dB
2001. 2. 24
Revision No : 3
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