KTC3911S Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION

SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
ᴌHigh Voltage : V_CEO=120V.
ᴌExcellent h_FE Linearity
: h_FE(0.1mA)/h_FE(2mA)=0.95(Typ.).
ᴌHigh h_FE: h_FE=200ᴕ700.
ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.).
ᴌComplementary to KTA1517S.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
120
120
5
100
20
150
150
-55ᴕ150
UNIT
V
V
V
mA
mA
mW
á´±
á´±
KTC3911S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L
B
L
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
h_FE Rank
AD ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Note : h_FE Classification GR(G):200ᴕ400
I_CBO
V_CB=120V, I_E=0
I_EBO
V_EB=5V, I_C=0
h_FE (Note) V_CE=6V, I_C=2mA
V_CE(sat)
I_C=10mA, I_B=1mA
f_T
V_CE=6V, I_C=1mA
C_ob
V_CB=10V, I_E=0, f=1MHz
NF
V_CE=6V, I_C=0.1mA
f=1kHz, Rg=10ká½µ
BL(L):350ᴕ700
MIN.
-
-
200
-
-
-
TYP.
-
-
-
-
100
4.0
MAX.
0.1
0.1
700
0.3
-
-
UNIT
ỌA
ỌA
V
MHz
pF
-
1.0
10
dB
2001. 2. 24
Revision No : 3
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