KTC3880S_15 Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
hSmall Reverse Transfer Capacitance
: C_re=0.7pF(Typ.)
hLow Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_stg
RATING
40
30
4
20
-20
150
150
-55q150
UNIT
V
V
V
mA
mA
mW


KTC3880S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
h_FE Rank
AQ ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=18V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=4V, I_C=0
DC Current Gain
h_FE (Note) V_CE=6V, I_C=1mA
Reverse Transfer Capacitance
C_re
V_CB=6V, f=1MHz, I_E=0
Transition Frequency
f_T
V_CE=6V, I_C=1mA
Collector-Base Time Constant
C_Chrbb^’ V_CB=6V, I_E=-1mA, f=30MHz
Noise Figure
Power Gain
NF
V_CC=6V, I_E=-1mA, f=100MHz (Fig.)
G_pe
Note : h_FE Classification R:40q80, O:70q140, Y:100q200
MIN.
-
-
40
-
300
-
-
15
TYP.
-
-
-
0.7
550
-
2.5
18
MAX.
0.5
0.5
200
-
-
30
5.0
-
UNIT
ǺA
ǺA
pF
MHz
pS
dB
2003. 6. 20
Revision No : 5
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