KTC3880S Datasheet, PDF (1/6 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN)

SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
Small Reverse Transfer Capacitance
: C_re=0.7pF(Typ.)
Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_stg
RATING
40
30
4
20
-20
150
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTC3880S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
h_FE Rank
AQ ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Reverse Transfer Capacitance
Transition Frequency
Collector-Base Time Constant
Noise Figure
Power Gain
I_CBO
I_EBO
h_FE (Note)
C_re
f_T
C_C rbb^'
NF
G_pe
V_CB=18V, I_E=0
V_EB=4V, I_C=0
V_CE=6V, I_C=1mA
V_CB=6V, f=1MHz, I_E=0
V_CE=6V, I_C=1mA
V_CB=6V, I_E=-1mA, f=30MHz
V_CC=6V, I_E=-1mA, f=100MHz (Fig.)
Note : h_FE Classification R:40 80, O:70 140, Y:100 200
MIN.
-
-
40
-
300
-
-
15
TYP.
-
-
-
0.7
550
-
2.5
18
MAX.
0.5
0.5
200
-
-
30
5.0
-
UNIT
A
A
pF
MHz
pS
dB
2003. 6. 20
Revision No : 5
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