KTC3878S Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
HF, VHF AMPLIFIER APPLICATION.
FEATURE
ᴌLow Noise Figure : NF=3.5dB(Max.) (f=1MHz).
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_stg
RATING
35
30
4
100
-100
150
150
-55ᴕ150
UNIT
V
V
V
mA
mA
mW
á´±
á´±
KTC3878S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L
B
L
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
h_FE Rank
Type Name
F
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=20V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=2V, I_C=0
DC Current Gain
h_FE (Note) V_CE=12V, I_C=2mA
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=10mA, I_B=1mA
Base-Emitter Saturation Voltage
V_BE(sat)
I_C=10mA, I_B=1mA
Transition Frequency
f_T
V_CE=10V, I_C=2mA
Reverse Transfer Capacitance
C_re
V_CB=10V, I_E=0, f=1MHz
Collector-Base Time Constant
Noise Figure
C_cᴌrbb’
NF
V_CE=10V, I_E=-1mA, f=30MHz
V_CE=10V, I_E=-1mA,
f=1MHz, Rg=50á½µ
Note : h_FE Classification R:40ᴕ80 , O:70ᴕ140 , Y:120ᴕ240
2001. 2. 24
Revision No : 2
MIN.
-
-
40
-
-
80
-
-
TYP.
-
-
-
-
-
120
2.2
30
MAX.
0.1
1.0
240
0.4
1.0
-
3.0
50
UNIT
ỌA
ỌA
V
V
MHz
pF
pS
-
2.0
3.5
dB
1/2