KTC3876S Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hExcellent h_FE Linearity
: h_FE(2)=25(Min.) at V_CE=6V, I_C=400mA.
hComplementary to KTA1505S.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current
I_C
Base Current
I_B
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
35
30
5
500
50
150
150
-55q150
UNIT
V
V
V
mA
mA
mW


KTC3876S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
h_FE Rank
W ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE
V_CB=35V, I_E=0
V_EB=5V, I_C=0
V_CE=1V, I_C=100mA
V_CE=6V, I_C=400mA
I_C=100mA, I_B=10mA
V_CE=1V, I_C=100mA
Transition Frequency
f_T
V_CE=6V, I_C=20mA
Collector Output Capacitance
C_ob
(Note) : h_FE(1) Classification O:70q140 Y:120q240
h_FE(2) Classification O:25Min. Y:40Min.
V_CB=6V, I_E=0, f=1MHz
GR:200q400
2007. 5. 29
Revision No : 3
MIN.
-
-
70
25
-
-
-
-
TYP.
-
-
-
-
0.1
0.8
300
7.0
MAX.
0.1
0.1
400
-
0.25
1.0
-
-
UNIT
ǺA
ǺA
V
V
MHz
pF
1/2