KTC3875S_15 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hExcellent h_FE Linearity
: h_FE(0.1mA)/h_FE(2mA)=0.95(Typ.).
hHigh h_FE : h_FE=70q700.
hLow Noise : NF=1dB(Typ.), 10dB(Max.).
hComplementary to KTA1504S.
hSuffix U Qualified to AEC-Q101 for Automotive
: Automotive and standard product are electrically and thermally the same,
except where specified.
ex) KTC3875S-Y-RTK/PU, KTC3875S-Y-RTK/HU
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
60
50
5
150
30
150
150
-55q150
UNIT
V
V
V
mA
mA
mW


KTC3875S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
h_FE Rank
AL ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
I_CBO
I_EBO
V_CB=60V, I_E=0
V_EB=5V, I_C=0
DC Current Gain
h_FE(Note) V_CE=6V, I_C=2mA
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=100mA, I_B=10mA
Base-Emitter Saturation Voltage
V_BE(sat)
I_C=100mA, I_B=10mA
Transition Frequency
f_T
V_CE=10V, I_C=1mA
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Noise Figure
V_CE=6V, I_C=0.1mA
NF
f=1kHz, Rg=10kʃ
Note : h_FE Classification O:70q140, Y:120q240, GR(G):200q400, BL(L):350q700
MIN.
-
-
70
-
-
80
-
TYP.
-
-
-
0.1
0.86
-
2.0
MAX.
0.1
0.1
700
0.25
1.0
-
3.5
UNIT
ǺA
ǺA
V
V
MHz
pF
-
1.0
10
dB
2015. 4. 09
Revision No : 4
1/3