KTC3790U_15 Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
FEATURES
hLow Noise Figure, High Gain.
hNF=1.2dB, |S_21e|²=13dB (f=1GHz).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
Storage Temperature Range
T_stg
RATING
20
10
1.5
65
100
150
-55q150
UNIT
V
V
V
mA
mW


KTC3790U
EPITAXIAL PLANAR NPN TRANSISTOR
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2
B
1.25+_ 0.15
1
3
C
0.90+_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
P
H 0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
H
M
0.70
0.42 +_0.10
NK
N
N
0.10 MIN
P
0.1 MAX
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
h_FE Rank
Type Name
R
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Reverse Transfer Capacitance
Transition Frequency
Insertion Gain
I_CBO
I_EBO
h_FE (Note1)
C_re
f_T
|S_21e|²
V_CB=10V, I_E=0
V_EB=1V, I_C=0
V_CE=8V, I_C=20mA
V_CB=10V, I_E=0, f=1MHz (Note2)
V_CE=8V, I_C=20mA
V_CE=8V, I_C=20mA, f=1GHz
Noise Figure
NF
V_CE=8V, I_C=7mA, f=1GHz
Note 1 : h_FE Classification L:50~100, M:80~160, N:125~250.
Note 2 : C_re is measured by 3 terminal method with capacitance bridge.
MIN.
-
-
50
-
-
11
-
TYP.
-
-
-
0.35
9
13
1.2
MAX.
1
1
250
0.9
-
-
2.5
UNIT
ǺA
ǺA
pF
GHz
dB
dB
2008. 8. 29
Revision No : 2
1/5