KTC3780U_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
KTC3780U
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
hLow Noise Figure, High Gain.
hNF=1.4dB, |S_21e|²=12dB (f=1GHz).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
Storage Temperature Range
T_stg
RATING
15
6
1.5
50
100
125
-55q125
UNIT
V
V
V
mA
mW


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Output Capacitance
Transition Frequency
Insertion Gain
I_CBO
I_EBO
h_FE
C_ob
f_T
|S_21e|²
Noise Figure
NF
TEST CONDITION
V_CB=10V, I_E=0
V_EB=1V, I_C=0
V_CE=5V, I_C=10mA
V_CB=5V, I_E=0, f=1MHz
V_CE=5V, I_C=10mA
V_CE=5V, I_C=10mA, f=1GHz
V_CE=5V, I_C=5mA, f=1GHz
MIN.
-
-
50
-
5
9
-
TYP.
-
-
-
-
8
12
1.4
MAX.
1
1
250
1.0
-
-
-
UNIT
ǺA
ǺA
pF
GHz
dB
dB
2008. 8. 29
Revision No : 3
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