KTC3770UL Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION

SEMICONDUCTOR
TECHNICAL DATA
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
KTC3770UL
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
Low Noise Figure, High Gain.
NF=1.1dB, |S_21e|²=11dB (f=1GHz).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note : * Mounted on a FR4 board (10
V_CBO
20
V
V_CEO
12
V
V_EBO
3
V
I_C
100
mA
P_C*
100
mW
T_j
150
T_stg
-55 150
10 1.0 , Cu Pad :100 ²)
C
1
4
A
2
3
B
H
2
3
D
F
D
1
G
4
H
E
E
DIM
A
B
C
D
E
F
G
H
MILLIMETERS
1.0 +_ 0.05
0.6 +_ 0.05
0.36
+0.02
- 0.03
0.25 +_0.03
0.15 +_0.03
0.65+_ 0.03
0.35 +_0.03
0.05
1. Collector
2. Base
3. Emitter
4. Collector
ULP-4
Marking
B
Type Name
h_FE Rank
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Output Capacitance
Reverse Transfer Capacitance
Transition Frequency
Insertion Gain
I_CBO
I_EBO
h_FE (Note1)
C_ob
C_re
f_T
|S_21e|²
V_CB=10V, I_E=0
V_EB=1V, I_C=0
V_CE=10V, I_C=20mA
V_CB=10V, I_E=0, f=1MHz (Note2)
V_CE=10V, I_C=20mA
V_CE=10V, I_C=20mA, f=1GHz
Noise Figure
NF
V_CE=10V, I_C=7mA, f=1GHz
Note 1 : h_FE Classification A:50~100, B:80~160, C:125~250.
Note 2 : C_re is measured by 3 terminal method with capacitance bridge.
MIN.
-
-
50
-
-
5
7.5
-
TYP.
-
-
-
-
0.65
7
11.5
1.1
MAX.
1
1
250
1.0
1.15
-
-
2
UNIT
A
A
pF
pF
GHz
dB
dB
2007. 5. 23
Revision No : 1
1/5