KTC3770U Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (VHF/UHF WIDE BAND AMPLIFIER)

SEMICONDUCTOR
TECHNICAL DATA
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
KTC3770U
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
Low Noise Figure, High Gain.
NF=1.1dB, |S_21e|²=11dB (f=1GHz).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
RATING
20
12
3
100
150
150
-55 150
UNIT
V
V
V
mA
mW
E
M
B
M
2
1
N
K
DIM MILLIMETERS
D
A
B
2.00+_ 0.20
1.25+_ 0.15
C
0.90+_ 0.10
3
D
0.3+0.10/-0.05
E
2.10+_ 0.20
G
0.65
H
0.15+0.1/-0.06
J
1.30
K
0.00-0.10
L
H
M
0.70
0.42+_ 0.10
N
0.10 MIN
N
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
R
Type Name
h_FE Rank
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Output Capacitance
Reverse Transfer Capacitance
Transition Frequency
Insertion Gain
I_CBO
I_EBO
h_FE (Note1)
C_ob
C_re
f_T
|S_21e|²
V_CB=10V, I_E=0
V_EB=1V, I_C=0
V_CE=10V, I_C=20mA
V_CB=10V, I_E=0, f=1MHz (Note2)
V_CE=10V, I_C=20mA
V_CE=10V, I_C=20mA, f=1GHz
Noise Figure
NF
V_CE=10V, I_C=7mA, f=1GHz
Note 1 : h_FE Classification A:50~100, B:80~160, C:125~250.
Note 2 : C_re is measured by 3 terminal method with capacitance bridge.
MIN.
-
-
50
-
-
5
7.5
-
TYP.
-
-
-
-
0.65
7
11.5
1.1
MAX.
1
1
250
1.0
1.15
-
-
2
UNIT
A
A
pF
pF
GHz
dB
dB
2002. 10. 14
Revision No : 0
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