KTC3770T_15 Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
FEATURES
hLow Noise Figure, High Gain.
hNF=1.1dB, |S_21e|²=11dB (f=1GHz).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
V_CBO
20
V_CEO
12
V_EBO
3
I_C
100
P_C *
0.9
T_j
150
Storage Temperature Range
T_stg
-55q150
* Package mounted on a ceramic board (600ɘ²Âƒ0.8ɘ)
UNIT
V
V
V
mA
W


KTC3770T
EPITAXIAL PLANAR NPN TRANSISTOR
E
K
B
2
3
1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9 +_0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
J
J
1. EMITTER
2. BASE
3. COLLECTOR
TSM
Marking
h_FE Rank
R ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Output Capacitance
Reverse Transfer Capacitance
Transition Frequency
Insertion Gain
I_CBO
I_EBO
h_FE (Note1)
C_ob
C_re
f_T
|S_21e|²
V_CB=10V, I_E=0
V_EB=1V, I_C=0
V_CE=10V, I_C=20mA
V_CB=10V, I_E=0, f=1MHz
(Note2)
V_CE=10V, I_C=20mA
V_CE=10V, I_C=20mA, f=1GHz
Noise Figure
NF
V_CE=10V, I_C=7mA, f=1GHz
Note 1 : h_FE Classification A:50~100, B:80~160, C:125~250.
Note 2 : C_re is measured by 3 terminal method with capacitance bridge.
MIN.
-
-
50
-
-
5
7.5
-
TYP.
-
-
-
-
0.65
7
11.5
1.1
MAX.
1
1
250
1.0
1.15
-
-
2
UNIT
ǺA
ǺA
pF
pF
GHz
dB
dB
2005. 3. 22
Revision No : 0
1/5