KTC3770S Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (VHF/UHF WIDE BAND AMPLIFIER)

SEMICONDUCTOR
TECHNICAL DATA
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
KTC3770S
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
Low Noise Figure, High Gain.
NF=1.1dB, |S_21e|²=11dB (f=1GHz).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
RATING
20
12
3
100
150
150
-55 150
UNIT
V
V
V
mA
mW
E
L
B
L
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
h_FE Rank
Type Name
R
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Output Capacitance
Reverse Transfer Capacitance
Transition Frequency
Insertion Gain
I_CBO
I_EBO
h_FE (Note1)
C_ob
C_re
f_T
|S_21e|²
V_CB=10V, I_E=0
V_EB=1V, I_C=0
V_CE=10V, I_C=20mA
V_CB=10V, I_E=0, f=1MHz (Note2)
V_CE=10V, I_C=20mA
V_CE=10V, I_C=20mA, f=1GHz
Noise Figure
NF
V_CE=10V, I_C=7mA, f=1GHz
Note 1 : h_FE Classification A:50~100, B:80~160, C:125~250.
Note 2 : C_re is measured by 3 terminal method with capacitance bridge.
MIN.
-
-
50
-
-
5
7.5
-
TYP.
-
-
-
-
0.65
7
11.5
1.1
MAX.
1
1
250
1.0
1.15
-
-
2
UNIT
A
A
pF
pF
GHz
dB
dB
2003. 2. 12
Revision No : 1
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