KTC3770F Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
KTC3770F
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
hLow Noise Figure, High Gain.
hNF=1.1dB, |S_21e|²=11dB (f=1GHz).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
RATING
20
12
3
100
50
150
-55q150
UNIT
V
V
V
mA
mW


E
B
2
DIM MILLIMETERS
A
0.6+_ 0.05
3
B
0.8 +_ 0.05
1
C 0.38+0.02/-0.04
D
0.2 +_ 0.05
E
1.0+_ 0.05
G
0.35+_ 0.05
J
0.1+_ 0.05
K
0.15+_ 0.05
1. EMITTER
2. BASE
3. COLLECTOR
TFSM
Marking
Type Name
7
h_FE Rank
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=10V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=1V, I_C=0
DC Current Gain
h_FE (Note1) V_CE=10V, I_C=20mA
Collector Output Capacitance
Reverse Transfer Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz (Note2)
C_re
Transition Frequency
f_T
V_CE=10V, I_C=20mA
Insertion Gain
|S_21e|²
V_CE=10V, I_C=20mA, f=1GHz
Noise Figure
NF
V_CE=10V, I_C=7mA, f=1GHz
Note 1 : h_FE Classification A:50~100, B:80~160, C:125~250.
Note 2 : C_re is measured by 3 terminal method with capacitance bridge.
MIN.
-
-
50
-
-
5
7.5
-
TYP.
-
-
-
-
0.65
7
11.5
1.1
MAX.
1
1
250
1.0
1.15
-
-
2
UNIT
ǺA
ǺA
pF
pF
GHz
dB
dB
2005. 4. 7
Revision No : 0
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