KTC3730V_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
FEATURES
Low Noise Figure, High Gain.
Small rbb’Cc (Typ. 4pS).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
RATING
20
11
3
50
100
150
-55 150
UNIT
V
V
V
mA
mW
KTC3730V
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
2
DIM MILLIMETERS
A
1.2 +_0.05
B
0.8 +_0.05
1
3
C
0.5 +_ 0.05
D
0.3 +_ 0.05
E
1.2 +_ 0.05
G
0.8 +_ 0.05
P
P
H
0.40
J
0.12+_ 0.05
K
0.2 +_ 0.05
P
5
1. EMITTER
2. BASE
3. COLLECTOR
VSM
Marking
R
Type Name
h_FE Rank
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
DC Current Gain
Collector Output Capacitance
I_CBO
I_EBO
V_CE(sat)
h_FE (Note)
C_ob
Collector-Base Time Constant
rbb’Cc
Transition Frequency
f_T
Noise Figure
NF
Note) h_FE Classification : F:56~120, G:82~180
TEST CONDITION
V_CB=10V, I_E=0
V_EB=2V, I_C=0
I_C=10mA, I_B=5mA
V_CE=10V, I_C=5mA
V_CB=10V, I_E=0, f=1MHz
V_CE=10V, I_E=10mA, f=31.8MHz
V_CE=10V, I_C=10mA, f=500MHz
V_CE=6V, I_C=2mA,
f=500MHz, Rg=50
MIN.
-
-
-
56
-
-
1.4
-
TYP.
-
-
-
-
0.8
4
3.2
MAX.
500
0.5
0.5
180
1.5
12
-
UNIT
nA
A
V
pF
pS
GHz
3.5
-
dB
2004. 1. 28
Revision No : 1
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