KTC3730F Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
KTC3730F
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
hLow Noise Figure, High Gain.
hSmall rbb’Cc (Typ. 4pS).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
Storage Temperature Range
T_stg
RATING
20
11
3
50
50
150
-55q150
UNIT
V
V
V
mA
mW


E
B
2
DIM MILLIMETERS
A
0.6+_ 0.05
3
B
0.8 +_ 0.05
1
C 0.38+0.02/-0.04
D
0.2 +_ 0.05
E
1.0+_ 0.05
G
0.35+_ 0.05
J
0.1+_ 0.05
K
0.15+_ 0.05
1. EMITTER
2. BASE
3. COLLECTOR
TFSM
Marking
Type Name
3
h_FE Rank
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
DC Current Gain
Collector Output Capacitance
Collector-Base Time Constant
I_CBO
I_EBO
V_CE(sat)
h_FE (Note)
C_ob
rbb’Cc
Transition Frequency
f_T
Noise Figure
NF
Note) h_FE Classification : F:56~120, G:82~180
TEST CONDITION
V_CB=10V, I_E=0
V_EB=2V, I_C=0
I_C=10mA, I_B=5mA
V_CE=10V, I_C=5mA
V_CB=10V, I_E=0, f=1MHz
V_CE=10V, I_E=10mA, f=31.8MHz
V_CE=10V, I_C=10mA, f=500MHz
V_CE=6V, I_C=2mA,
f=500MHz, Rg=50ʃ
MIN.
-
-
-
56
-
-
1.4
-
TYP.
-
-
-
-
0.8
4
3.2
MAX.
500
0.5
0.5
180
1.5
12
-
UNIT
nA
ǺA
V
pF
pS
GHz
3.5
-
dB
2005. 4. 7
Revision No : 0
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