KTC3708U_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
High frequency amplifier transistor, RF switching application.
FEATURES
hVery low on resistance (R_ON).
hLow capacitance.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
Storage Temperature Range
T_stg
RATING
12
6
3
50
100
150
-55q150
UNIT
V
V
V
mA
mW


KTC3708U
EPITAXIAL PLANAR NPN TRANSISTOR
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2
B
1.25+_ 0.15
1
3
C
0.90+_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
P
H 0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
H
M
0.70
0.42 +_0.10
NK
N
N
0.10 MIN
P
0.1 MAX
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
Type Name
EA
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
On Resistance
SYMBOL
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
R_on
TEST CONDITION
V_CB=10V, I_E=0
V_EB=2V, I_C=0
V_CE=5V, I_C=5mA
I_C=10mA, I_B=1mA
V_CE=5V, I_E=-10mA, f=200MHz
V_CB=10V, I_E=0A, f=1MHz
I_B=3mA, V_I=100mVrms, f=500kHz
MIN.
-
-
270
-
300
-
-
TYP.
-
-
-
-
800
1
2
MAX.
0.5
0.5
560
0.3
-
1.7
-
UNIT
ǺA
ǺA
V
MHz
pF
ʃ
2008. 8. 29
Revision No : 1
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