KTC3631D_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE SWITCHING.
FEATURES
hLow Collector Saturation Voltage
: V_CE(sat)=0.5V(Max.) at (I_C=0.5A).
hHigh Switching Speed Typically.
: t_fℳ0.4ǺS at I_C=1A.
hComplementary to KTA1862D.
hWide Safe Operating Area (SOA)
KTC3631D/L
TRIPLE DIFFUSED NPN TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
V_CBO
V_CEO
V_EBO
I_C
Collector Power
Ta=25
P_C
Dissipation
Tc=25
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
400
400
7
2.0
4.0
1.0
10
150
-55q150
UNIT
V
V
V
A
W


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
h_FE(1) (Note)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
C_ob
TEST CONDITION
V_CB=400V, I_E=0
V_EB=5.0V, I_C=0
V_CE=5.0V, I_C=100mA
V_CE=5.0V, I_C=500mA
I_C=500mA, I_B=100mA
I_C=500mA, I_B=100mA
V_CE=10V, I_E=-100mA, f=5MHz
V_CB=10V, I_E=0, f=1MHz
Turn-on Time
t_on
Switching
Storage Time
t_stg
Time
Fall Time
t_f
Note : h_FE(1) Classification O:56q120 , Y:82q180
2003. 3. 27
Revision No : 4
MIN.
-
-
56
6
-
-
-
-
TYP.
-
-
100
-
0.3
-
18
30
MAX.
1.0
1.0
180
-
0.5
1.2
-
-
UNIT
ǺA
ǺA
V
V
MHz
pF
-
0.2
-
-
1.8
-
ǺS
-
0.4
-
1/3