KTC3620V Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
VHF/UHF/WIDE BAND AMPLIFIER APPLICATON.
FEATURES
Low Noise Figure.
High Gain.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
Storage Temperature Range
T_stg
RATING
9
6
2
30
100
150
-55 150
UNIT
V
V
V
mA
mW
KTC3620V
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
2
DIM MILLIMETERS
A
1.2 +_0.05
B
0.8 +_0.05
1
3
C
0.5 +_ 0.05
D
0.3 +_ 0.05
E
1.2 +_ 0.05
G
0.8 +_ 0.05
P
P
H
0.40
J
0.12+_ 0.05
K
0.2 +_ 0.05
P
5
1. EMITTER
2. BASE
3. COLLECTOR
VSM
Marking
H
Type Name
hFE Rank
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Reverse Transfer Capacitance
Transition Frequency
Insertion Gain
Noise Figure
I_CBO
I_EBO
h_FE (Note1)
Cre (Note2)
f_T
|S_21e|²
NF
V_CB=5V, I_E=0
V_EB=1V, I_C=0
V_CE=3V, I_C=10mA
V_CB=3V, I_E=0, f=1MHz
V_CE=3V, I_C=10mA, f=2GHz
V_CE=3V, I_C=10mA, f=2GHz
V_CE=3V, I_C=3mA, f=2GHz
Note 1) h_FE Classification 1(01):75~110, 2(02):95~140.
Note 2) C_re is measured by 3 terminal method with capacitance bridge.
2005. 12. 2
Revision No : 0
MIN.
-
-
75
-
-
7.0
-
TYP.
-
-
-
0.4
12.0
8.5
1.5
MAX.
100
100
140
0.7
-
-
2.5
UNIT
nA
nA
pF
GHz
dB
dB
1/7