KTC3620S_15 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
VHF/UHF/WIDE BAND AMPLIFIER APPLICATON.
FEATURES
hLow Noise Figure.
hHigh Gain.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current
I_C
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
9
6
2
30
100
150
-55q150
UNIT
V
V
V
mA
mW


KTC3620S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L
B
L
DIM MILLIMETER
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
A
Type Name
hFE Rank
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Reverse Transfer Capacitance
Transition Frequency
Insertion Gain
Noise Figure
I_CBO
I_EBO
h_FE (Note1)
Cre (Note2)
f_T
|S_21e|²
NF
V_CB=5V, I_E=0
V_EB=1V, I_C=0
V_CE=3V, I_C=10mA
V_CB=3V, I_E=0, f=1MHz
V_CE=3V, I_C=10mA, f=2GHz
V_CE=3V, I_C=10mA, f=2GHz
V_CE=3V, I_C=3mA, f=2GHz
Note 1) h_FE Classification 1(01):75~110, 2(02):95~140.
Note 2) C_re is measured by 3 terminal method with capacitance bridge.
MIN.
-
-
75
-
-
6.5
-
TYP.
-
-
-
0.4
12.0
8
1.5
MAX.
100
100
140
0.7
-
-
2.5
UNIT
nA
nA
pF
GHz
dB
dB
2008. 7. 14
Revision No : 0
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