KTC3605T_15 Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTC3605T
EPITAXIAL PLANAR NPN TRANSISTOR
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
FEATURES
hLow Noise Figure, High Gain.
hNF=1.1dB, |S_21e|²=13dB (f=1GHz).
hTwo internal isolated Transistors in one package.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
V_CBO
20
V_CEO
10
V_EBO
1.5
I_C
40
P_C*
900
T_j
150
Storage Temperature Range
T_stg
-55q150
*Package mounted on a ceramic board (600mm² ƒ 0.8mm)
UNIT
V
V
V
mA
mW


EQUIVALENT CIRCUIT (Top View)
6
5
4
Q2
Q1
1
2
3
E
K
B
K
1
6
2
5
3
4
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9+_ 0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
J
J
1. Q1 Base
2. Q1 Emitter
3. Q2 Collector
4. Q2 Base
5. Q2 Emitter
6. Q1 Collector
TS6
Marking
h_FE Rank
Type Name
R
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=10V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=1V, I_C=0
DC Current Gain
h_FE (Note1) V_CE=8V, I_C=20mA
Collector Output Capacitance
Reverse Transfer Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz (Note2)
C_re
Transition Frequency
f_T
V_CE=8V, I_C=20mA
Insertion Gain
|S_21e|² (1)
|S_21e|² (2)
V_CE=8V, I_C=20mA, f=1GHz
V_CE=8V, I_C=20mA, f=2GHz
Noise Figure
NF (1)
NF (2)
V_CE=8V, I_C=5mA, f=1GHz
V_CE=8V, I_C=5mA, f=2GHz
Note 1 : h_FE Classification H:50~100, J:80~160, K:125~250
Note 2 : C_re is measured by 3 terminal method with capacitance bridge.
MIN.
-
-
50
-
-
7
10
-
-
-
TYP.
-
-
-
0.7
0.5
10
13
7
1.1
1.7
MAX.
1
1
250
-
0.95
-
-
-
2.5
-
UNIT
ǺA
ǺA
-
pF
pF
GHz
dB
dB
dB
dB
2007. 6. 21
Revision No : 0
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