KTC3600S Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION

SEMICONDUCTOR
TECHNICAL DATA
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
KTC3600S
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
Low Noise Figure, High Gain.
NF=1.1dB, |S_21e|²=13dB (f=1GHz).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
Storage Temperature Range
T_stg
RATING
20
10
1.5
40
150
150
-55 150
UNIT
V
V
V
mA
mW
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
h_FE Rank
R ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=10V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=1V, I_C=0
DC Current Gain
h_FE (Note1) V_CE=8V, I_C=20mA
Collector Output Capacitance
Reverse Transfer Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz (Note2)
C_re
Transition Frequency
f_T
V_CE=8V, I_C=20mA
Insertion Gain
|S_21e|² (1)
|S_21e|² (2)
V_CE=8V, I_C=20mA, f=1GHz
V_CE=8V, I_C=20mA, f=2GHz
Noise Figure
NF (1)
NF (2)
V_CE=8V, I_C=5mA, f=1GHz
V_CE=8V, I_C=5mA, f=2GHz
Note 1 : h_FE Classification H:50~100, J:80~160, K:125~250
Note 2 : C_re is measured by 3 terminal method with capacitance bridge.
MIN.
-
-
50
-
-
7
10
-
-
-
TYP.
-
-
-
0.7
0.5
10
13
7
1.1
1.7
MAX.
1
1
250
-
0.95
-
-
-
2.5
-
UNIT
A
A
pF
pF
GHz
dB
dB
dB
dB
2007. 8. 22
Revision No : 0
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