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KTC3572 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
FEATURE
Low Collector-Emitter Saturation Voltage VCE(sat).
High Collector Current Capability : IC and ICP.
Higher Efficiency Leading to Less Heat Generation.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Storage Temperature Range
Tstg
RATING
120
100
5
1
3
300
1
150
-55 150
UNIT
V
V
V
A
mA
W
KTC3572
EPITAXIAL PLANAR NPN TRANSISTOR
B
D
P
DEPTH:0.2
C
Q
K
F
F
H
H
M
E
123
HL
DIM MILLIMETERS
A
7.20 MAX
B
5.20 MAX
C
0.60 MAX
D
2.50 MAX
E
1.15 MAX
F
1.27
S
G
1.70 MAX
H
0.55 MAX
J
14.00+_ 0.50
K
0.35 MIN
L
0.75+_ 0.10
M
4
N
25
HO
1.25
P
Φ1.50
Q
0.10 MAX
R
12.50 +_ 0.50
S
1.00
N
N
1. EMITTER
2. COLLECTOR
3. BASE
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage **
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Collector-Emitter Saturation Voltage **
Base-Emitter Saturation Voltage **
Base-Emitter Voltag
DC Current Gain **
Transition Frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat) (1)
VCE(sat) (2)
VCE(sat) (3)
VBE(sat)
VBE
hFE(1)
hFE(2)
hFE(3)
hFE(4)
fT
Collector Output Capacitance
Cob
** Pulse Width = 300 S, Duty Cycle 2%.
TEST CONDITION
IC=100 A
IC=1mA
IE=100 A
VCB=80V
VEB=4V, IC=0A
VCES=80V, VBE=0V
IC=100mA, IB=10mA
IC=500mA, IB=50mA
IC=1A, IB=100mA
IC=1A, IB=100mA
VCE=10V, IC=1A
VCE=10V, IC=1mA
VCE=10V, IC=250mA
VCE=10V, IC=500mA
VCE=10V, IC=1A
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
2010. 6. 4
Revision No : 0
MIN.
120
100
5
-
-
-
-
-
-
-
-
150
150
100
80
100
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
9.5
MAX.
-
-
-
100
100
100
0.04
0.12
0.2
1.05
0.9
-
500
-
-
-
-
UNIT
V
V
V
nA
nA
nA
V
V
V
MHz
pF
1/3
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