KTC3571S Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
FEATURE
Low Collector-Emitter Saturation Voltage V_CE(sat).
High Collector Current Capability : I_C and I_CP.
Higher Efficiency Leading to Less Heat Generation.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation**
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
120
V
100
V
5
V
1
A
3
300
mA
350
mW
150
Storage Temperature Range
T_stg
-55 150
Note : * Package Mounted on 99.5% Alumina 10 8 0.6mm.
MARKING
Lot No.
KMB ^{Type Name}
KTC3571S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L
B
L
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage **
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Collector-Emitter Saturation Voltage **
Base-Emitter Saturation Voltage **
Base-Emitter Voltag
DC Current Gain **
Transition Frequency
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
I_CES
V_CE(sat) (1)
V_CE(sat) (2)
V_CE(sat) (3)
V_BE(sat)
V_BE
h_FE(1)
h_FE(2)
h_FE(3)
h_FE(4)
f_T
Collector Output Capacitance
C_ob
** Pulse Width = 300 S, Duty Cycle 2%.
TEST CONDITION
I_C=100 A
I_C=1mA
I_E=100 A
V_CB=80V
V_EB=4V, I_C=0A
V_CES=80V, V_BE=0V
I_C=100mA, I_B=10mA
I_C=500mA, I_B=50mA
I_C=1A, I_B=100mA
I_C=1A, I_B=100mA
V_CE=10V, I_C=1A
V_CE=10V, I_C=1mA
V_CE=10V, I_C=250mA
V_CE=10V, I_C=500mA
V_CE=10V, I_C=1A
V_CE=10V, I_C=50mA, f=100MHz
V_CB=10V, f=1MHz
2010. 2. 24
Revision No : 4
MIN.
120
100
5
-
-
-
-
-
-
-
-
150
150
100
80
100
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
9.5
MAX.
-
-
-
100
100
100
0.04
0.12
0.2
1.05
0.9
-
500
-
-
-
-
UNIT
V
V
V
nA
nA
nA
V
V
V
MHz
pF
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