KTC3551T Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTC3551T
EPITAXIAL PLANAR NPN TRANSISTOR
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS APPLICATION.
FEATURES
Adoption of MBIT Processes.
Large Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High-Speed Switching.
Ultrasmall Package Facilitates Miniaturization in end Products.
High Allowable Power Dis sipation.
Complementary to KTA1551T.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CES
V_CEO
Emitter-Base Voltage
V_EBO
DC
Collector Current
I_C
Pulse
I_CP
Base Current
I_B
Collector Power Dissipation
P_C *
Junction Temperature
T_j
Storage Temperature Range
T_stg
* Package mounted on a ceramic board (600
80
80
50
5
1.0
3
200
0.9
150
-55 150
0.8 )
UNIT
V
V
V
A
mA
W
E
K
B
2
3
1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9 +_0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
J
J
1. EMITTER
2. BASE
3. COLLECTOR
TSM
Marking
H K ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
V_(BR)CBO
V_(BR)CES
V_(BR)CEO
V_(BR)EBO
V_CE(sat)1
V_CE(sat)2
V_BE(sat)
h_FE
f_T
C_ob
TEST CONDITION
V_CB=40V, I_E=0
V_EB=4V, I_C=0
I_C=10 A, I_E=0
I_C=100 A, V_BE=0
I_C=1mA, I_B=0
I_E=10 A, I_C=0
I_C=500mA, I_B=10mA
I_C=300mA, I_B=6mA
I_C=500mA, I_B=10mA
V_CE=2V, I_C=100mA
V_CE=10V, I_C=300mA
V_CB=10V, f=1MHz
MIN.
-
-
80
80
50
5
-
-
-
200
-
-
TYP.
-
-
-
-
-
-
130
90
0.81
-
420
6
MAX.
0.1
0.1
-
-
-
-
190
135
1.2
560
-
-
UNIT
A
A
V
V
V
V
mV
mV
V
MHz
pF
Switching
Time
Turn-On Time
Storage Time
Fall Time
t_on
PW=20µs
DC ^<= 1%
I_B1
I_B2
INPUT
R_B
t_stg
50Ω ^VR
-
35
-
OUTPUT
R_L
-
330
-
nS
100µF
470µF
t_f
V_BE =-5V
V_CC =25V
-
40
-
20I_B1=-20I_B2=I_C =500mA
2001. 6. 28
Revision No : 0
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