KTC3503_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH-DEFINITION CRT DISPLAY,
VIDEO OUTPUT APPLICATIONS.
FEATURES
hHigh breakdown voltage : V_CEO‡300V.
hSmall reverse transfer capacitance and
excellent high frequency characteristic.
: C_re=1.8pF (V_CB=30V, f=1MHz)
hComplementary KTA1381.
KTC3503
TRIPLE DIFFUSED NPN TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power
Dissipation
Ta=25
Tc=25
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
300
300
5
100
200
1.5
7
150
-55q150
UNIT
V
V
V
mA
W


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
DC Current Gain
h_FE (Note)
Transition Frequency
f_T
Collector Output Capacitance
C_ob
Reverse Transfer Capacitance
C_re
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter Saturation Voltage
V_BE(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
V_(BR)CBO
V_(BR)CEO
Base-Emitter Breakdown Voltage
V_(BR)EBO
Note : h_FE Classification O:60q120, Y:100q200
TEST CONDITION
V_CB=200V, I_E=0
V_EB=4V, I_C=0
V_CE=10V, I_C=10mA
V_CE=30V, I_C=10mA
V_CB=30V, I_E=0, f=1MHz
V_CB=30V, I_E=0, f=1MHz
I_C=20mA, I_B=2mA
I_C=20mA, I_B=2mA
I_C=10ǺA, I_E=0
I_C=1mA, I_B=0
I_E=10ǺA, I_C=0
MIN.
-
-
60
-
-
-
-
-
300
300
5
TYP.
-
-
-
150
2.6
1.8
-
-
-
-
-
MAX.
0.1
0.1
200
-
-
-
0.6
1.0
-
-
-
UNIT
ǺA
ǺA
MHz
pF
pF
V
V
V
V
V
2014. 6. 11
Revision No : 4
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