KTC3502_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH-DEFINITION CRT DISPLAY
VIDEO OUTPUT APPLICATION.
FEATURES
hHigh Voltage : V_CEO=200V.
hHigh Transition Frequency : f_T=150MHz(Typ.).
hLow Collector Output Capacitance : C_ob=1.7pF(Typ.).
KTC3502
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power
Dissipation
Ta=25
Tc=25
V_CBO
V_CEO
V_EBO
I_C
I_cp
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
200
200
5
100
200
1.5
5
150
-55q150
UNIT
V
V
V
mA
W


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
I_CBO
I_EBO
V_(BR)CEO
DC Current Gain
h_FE
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emittter Saturation Voltage
V_BE(sat)
Transition Frequency
f_T
Collector Output Capacitance
C_ob
Reverse Transfer Capassification
C_re
Note : h_FE Classification O:70q140 , Y:120q240
TEST CONDITION
V_CB=150V, I_E=0
V_EB=4V, I_C=0
I_C=1mA, I_B=0
V_CE=5V, I_C=10mA
I_C=20mA, I_B=2mA
I_C=20mA, I_B=2mA
V_CE=30V, I_C=10mA
V_CB=30V, I_E=0, f=1MHz
V_CB=30V, f=1MHz
MIN.
-
-
200
70
-
-
-
-
-
TYP.
-
-
-
-
-
-
150
1.7
1.2
MAX.
0.1
0.1
-
240
0.6
1.0
-
-
-
UNIT
ǺA
ǺA
V
-
V
V
MHz
pF
pF
2003. 7. 24
Revision No : 2
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