KTC3423_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
AUDIO FREQUENCY AMPLIFIER APPLICATION.
FEATURES
High Breakdown Voltage : V_CEO=150V(Min.).
Low Output Capacitance : C_ob=5.0pF(Max.).
High Transition Frequency : f_T=120MHz(Typ.).
Complementary to KTA1360.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Base Current
Collector Power
Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_E
I_B
P_C
T_j
T_stg
RATING
150
150
5
50
-50
5
1.5
5
150
-55 150
UNIT
V
V
V
mA
mA
mA
W
KTC3423
EPITAXIAL PLANAR NPN TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
N
O
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
I_CBO
I_EBO
h_FE(Note)
V_CE(sat)
V_BE(sat)
f_T
Collector Output Capacitance
C_ob
Note : h_FE Classification O:70 140, Y:120 240
TEST CONDITION
V_CB=150V, I_E=0
V_EB=5V, I_C=0
V_CE=5V, I_C=10mA
I_C=10mA, I_B=1mA
I_C=10mA, I_B=1mA
V_CE=30V, I_C=10mA
V_CB=10V, I_E=0, f=1MHz
MIN.
-
-
70
-
-
-
-
TYP.
-
-
-
-
-
120
3.5
MAX.
0.1
0.1
240
0.5
1.0
-
5.0
UNIT
A
A
V
V
MHz
pF
2007. 3. 28
Revision No : 2
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