KTC3295_02 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AMPLIFIER APPLICATION.
FEATURE
High h_FE : h_FE=600 3600.
Noise Figure : 0.5dB(Typ.) at f=100Hz.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
Storage Temperature Range
T_stg
RATING
60
50
5
150
30
150
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTC3295
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
h_FE Rank
Type Name
T
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
h_FE (Note)
V_CE(sat)
f_T
C_ob
Noise Figure
NF (1)
NF (2)
Note : h_FE Classification A:600 1800 , B:1200 3600
TEST CONDITION
V_CB=50V, I_E=0
V_EB=5V, I_C=0
V_CE=6V, I_C=2mA
I_C=100mA, I_B=10mA
V_CE=10V, I_C=10mA
V_CB=10V, I_E=0, f=1MHz
V_CE=6V, I_C=0.1mA,
f=100Hz, Rg=10k
V_CE=6V, I_C=0.1mA,
f=1kHz, Rg=10k
2002. 4. 9
Revision No : 3
MIN.
-
-
600
-
100
-
TYP.
-
-
-
0.12
250
3.5
MAX.
0.1
0.1
3600
0.25
-
-
UNIT
A
A
V
MHz
pF
-
0.5
-
dB
-
0.3
-
1/3