KTC3266 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATION.
POWER SWITCHING APPLICATION.
FEATURES
ᴌLow Saturation Voltage.
: V_CE(sat)=0.5V(Max.) at I_C=2A
ᴌComplementary to KTA1296.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
Storage Temperature Range
T_stg
RATING
20
20
6
2
0.5
625
150
-55ᴕ150
UNIT
V
V
V
A
A
mW
á´±
á´±
KTC3266
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
h_FE(1) (Note)
h_FE(2)
V_CE(sat)
V_BE
f_T
Collector Output Capacitance
C_ob
Note : h_FE(1) Classification Y:120ᴕ240, GR:200ᴕ400
TEST CONDITION
V_CB=20V, I_E=0
V_EB=6V, I_C=0
V_CE=2V, I_C=0.1A
V_CE=2V, I_C=2A
I_C=2A, I_B=0.1A
V_CE=2V, I_C=0.1A
V_CE=2V, I_C=0.5A
V_CB=10V, I_E=0, f=1MHz
MIN.
-
-
120
75
-
-
-
-
TYP.
-
-
-
-
-
-
120
30
MAX.
0.1
0.1
400
-
0.5
0.85
-
-
UNIT
ỌA
ỌA
V
V
MHz
pF
2000. 11. 30
Revision No : 0
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