KTC3265_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY POWER AMPLIFIER APPLICATION.
POWER SWITCHING APPLICATION.
FEATURES
hHigh DC Current Gain : h_FE=100q320.
hLow Saturation Voltage
: V_CE(sat)=0.4V(Max.) (I_C=500mA, I_B=20mA).
hSuitable for Driver Stage of Small Motor.
hComplementary to KTA1298.
hSmall Package.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V_CBO
V_CEO
V_EBO
I_C
Base Current
I_B
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
35
30
5
800
160
200
150
-55q150
UNIT
V
V
V
mA
mA
mW


KTC3265
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
h_FE Rank
Type Name
E
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
V_CB=30V, I_E=0
I_EBO
V_EB=5V, I_C=0
V_(BR)CEO
V_EB=10mA, I_B=0
V_(BR)EBO
I_E=1mA, I_C=0
h_FE(1) (Note) V_CE=1V, I_C=100mA
h_FE(2)
V_CE=1V, I_C=800mA
V_CE(sat)
I_C=500mA, I_B=20mA
V_BE
V_CE=1V, I_C=10mA
f_T
V_CE=5V, I_C=10mA, f=100MHz
Collector Output Capacitance
C_ob
Note : h_FE(1) Classification O:100q200, Y:160q320
V_CB=10V, I_E=0, f=1MHz
1998. 6. 15
Revision No : 1
MIN.
-
-
30
5
100
40
-
0.5
-
-
TYP.
-
-
-
-
-
-
-
-
120
13
MAX.
100
100
-
-
320
-
0.5
0.8
-
-
UNIT
nA
nA
V
V
V
V
MHz
pF
1/2