KTC3245 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE)

SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES
ᴌHigh Breakdown Voltage.
ᴌCollector Power Dissipation : P_C=625mW.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
RATING
400
350
6
300
625
150
-55ᴕ150
UNIT
V
V
V
mA
mW
á´±
á´±
KTC3245
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (1)
Collector-Emitter Breakdown Voltage (2)
Emitter-Base Breakdown Voltage
Collector Cut off Current
Collector Cut off Current
Emitter Cutoff Current
V_(BR)CBO
V_(BR)CEO
V_(BR)CES
V_(BR)EBO
I_CBO
I_CES
I_EBO
DC Current Gain *
h_FE
Collector-Emitter Saturation Voltage *
V_CE(sat)
Base-Emitter Saturation Voltage *
V_BE(sat)
* Pulse Test : Pulse Width⏊300ỌS, Duty Cycle⏊2.0%
TEST CONDITION
I_C=100ỌA, I_E=0
I_C=1mA, I_B=0
I_C=100ỌA, I_B=0
I_E=10ỌA, I_C=0
V_CB=320V, I_E=0
V_CE=320V, I_B=0
V_EB=4V, I_C=0
V_CE=10V, I_C=1mA
V_CE=10V, I_C=10mA
V_CE=10V, I_C=50mA
V_CE=10V, I_C=100mA
I_C=10mA, I_B=1mA
I_C=10mA, I_B=1mA
MIN.
400
350
400
6.0
-
-
-
40
50
45
40
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-
100
500
100
-
200
-
-
0.5
0.75
UNIT
V
V
V
V
nA
nA
nA
V
V
2000. 8. 23
Revision No : 0
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