KTC3226_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
STROBO FLASH APPLICATION.
HIGH CURRENT APLICATION.
FEATURES
ᴌHigh DC Current Gain and Excellent h_FE Linearity
: h_FE(1)=140ᴕ600 (V_CE=1V, I_C=0.5A)
: h_FE(2)=70(Min.), 200(Typ.) (V_CE=1V, I_C=2A).
ᴌLow Saturation Voltage
: V_CE(sat)=0.5V(Max.) (I_C=2A, I_B=50mA).
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
DC
Pulse (Note1)
Emitter Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CES
V_CEO
V_EBO
I_C
I_CP
I_E
P_C
T_j
Storage Temperature Range
T_stg
Note 1 : Pulse Width⏊10ms, Duty Cycle⏊30%
RATING
30
30
10
6
2
5
-2
1
150
-55ᴕ150
UNIT
V
V
V
A
A
W
á´±
á´±
KTC3226
EPITAXIAL PLANAR NPN TRANSISTOR
B
D
P
DEPTH:0.2
C
Q
K
F
F
H
H
M
E
123
HL
N
N
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A
7.20 MAX
B
5.20 MAX
S
C
0.60 MAX
D
2.50 MAX
E
1.15 MAX
F
1.27
G
1.70 MAX
H
0.55 MAX
J
14.00+_ 0.50
H
K
L
0.35 MIN
0.75+_ 0.10
M
4
N
25
O
1.25
P
Φ1.50
Q
0.10 MAX
R
12.50 +_ 0.50
S
1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
V_(BR)CEO
V_(BR)EBO
h_FE(1) (Note2)
h_FE(2)
V_CE(sat)
V_BE
f_T
V_CB=30V, I_E=0
V_EB=6V, I_C=0
I_C=10mA, I_B=0
I_E=-1mA, I_C=0
V_CE=1V, I_C=0.5A
V_CE=1V, I_C=2A
I_C=2A, I_B=50mA
V_CE=1V, I_C=2A
V_CE=1V, I_C=0.5A
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Note 2 : h_FE(1) Classification A:140ᴕ240, B:200ᴕ330, C:300ᴕ450, D:420ᴕ600
MIN.
-
-
10
6
140
70
-
-
-
-
TYP.
-
-
-
-
-
200
0.2
0.86
150
27
MAX.
100
100
-
-
600
-
0.5
1.5
-
-
UNIT
nA
nA
V
V
V
V
MHz
pF
1994. 5. 11
Revision No : 0
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