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| KTC3210 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT) | |||
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SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES
á´Complementary to KTA1282.
KTC3210
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
RATING
30
30
5
2
-2
625
150
-55á´150
UNIT
V
V
V
A
A
mW
á´±
á´±
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
V(BR)EBO
hFE (Note)
VCE(sat)
VBE
fT
Collector Output Capacitance
Cob
Note : hFE Classification 0:100á´200, Y:160á´320
TEST CONDITION
VCB=30V, IE=0
VEB=5V, IC=0
IC=10mA, IB=0
IC=1mA, IC=0
VCE=2V, IC=500mA
IC=1.5A, IB=0.03A
VCE=2V, IC=500mA
VCE=2V, IC=500mA
VCB=10V, IE=0, f=1MHz
MIN.
-
-
30
5
100
-
-
-
-
TYP.
-
-
-
-
-
-
-
120
13
MAX.
100
100
-
-
320
2.0
1.0
-
-
UNIT
nA
nA
V
V
V
V
MHz
pF
1999. 9. 10
Revision No : 0
1/2
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