KTC3209_05 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATIONS.
POWER SWITCHING APPLICATIONS.
FEATURES
Low Collector Saturation Voltage
: V_CE(sat)=0.5V(Max.) (I_C=1A)
High Speed Switching Time : t_stg=1.0 S(Typ.)
Complementary to KTA1281.
KTC3209
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
Storage Temperature Range
T_stg
RATING
50
50
5
2
-2
1
150
-55 150
UNIT
V
V
V
A
A
W
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=50V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=5V, I_C=0
Collector-Emitter Breakdown Voltage V_(BR)CEO I_C=10mA, I_B=0
Emitter-Base Breakdown Voltage
V_(BR)EBO I_E=100mA, I_B=0
DC Current Gain
h_FE (1) (Note) V_CE=2V, I_C=0.5A (Note)
h_FE (2) (Note) V_CE=2V, I_C=1.5A
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=1A, I_B=0.05A
Base-Emitter Saturation Voltage
V_BE(sat)
I_C=1A, I_B=0.05A
Transition Frequency
f_T
V_CE=2V, I_C=0.5A
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Turn-on Time
t_on
Switching
Storage Time
t_stg
Time
Fall Time
t_f
Note : h_FE Classification 0:70 140, Y:120 240
2005. 12. 2
Revision No : 1
MIN.
-
-
50
5
70
40
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
100
30
MAX.
0.1
0.1
-
-
240
-
0.5
1.2
-
-
UNIT
A
A
V
V
V
V
MHz
pF
-
0.1
-
-
1.0
-
S
-
0.1
-
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