KTC3206_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SEMICONDUCTOR
TECHNICAL DATA
BLACK AND WHITE TV VIDEO OUTPUT APLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
FEATURES
High Breakdown Voltage : V_CEO=150V(Min.).
Low Output Capacitance : C_ob=5.0pF(Max.).
High Transition Frequency : f_T=120MHz(Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Base Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_E
I_B
P_C
T_j
Storage Temperature Range
T_stg
RATING
200
150
5
50
-50
5
1
150
-55 150
UNIT
V
V
V
mA
mA
mA
W
KTC3206
EPITAXIAL PLANAR NPN TRANSISTOR
B
D
P
DEPTH:0.2
C
Q
K
F
F
H
H
M
E
123
HL
N
N
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A
7.20 MAX
B
5.20 MAX
S
C
0.60 MAX
D
2.50 MAX
E
1.15 MAX
F
1.27
G
1.70 MAX
H
0.55 MAX
J
14.00+_ 0.50
K
H
L
0.35 MIN
0.75+_ 0.10
M
4
N
25
O
1.25
P
Φ1.50
Q
0.10 MAX
R
12.50 +_ 0.50
S
1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
I_CBO
I_EBO
h_FE (Note)
V_CE(sat)
V_BE(sat)
f_T
Collector Output Capacitance
C_ob
Note : h_FE Classification 0:70 140, Y:120 240
TEST CONDITION
V_CB=200V, I_E=0
V_EB=5V, I_C=0
V_CE=5V, I_C=10mA
I_C=10mA, I_B=1mA
I_C=10mA, I_B=1mA
V_CE=30V, I_C=10mA
V_CB=10V, I_E=0, f=1MHz
MIN.
-
-
70
-
-
-
-
TYP.
-
-
-
-
-
120
3.5
MAX.
0.1
0.1
240
0.5
1.0
-
5.0
UNIT
A
A
V
V
MHz
pF
2007. 3. 28
Revision No : 1
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