KTC3205_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor

SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES
ᴌComplementary to KTA1273.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_stg
RATING
30
30
5
2
-2
1
150
-55ᴕ150
UNIT
V
V
V
A
A
W
á´±
á´±
KTC3205
EPITAXIAL PLANAR NPN TRANSISTOR
B
D
P
DEPTH:0.2
C
Q
K
F
F
H
H
M
E
123
HL
N
N
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A
7.20 MAX
B
5.20 MAX
S
C
0.60 MAX
D
2.50 MAX
E
1.15 MAX
F
1.27
G
1.70 MAX
H
0.55 MAX
J
14.00+_ 0.50
H
K
L
0.35 MIN
0.75+_ 0.10
M
4
N
25
O
1.25
P
Φ1.50
Q
0.10 MAX
R
12.50 +_ 0.50
S
1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
V_(BR)CEO
V_(BR)EBO
h_FE (Note)
V_CE(sat)
V_BE
f_T
C_ob
Note : h_FE Classification 0:100ᴕ200, Y:160ᴕ320
TEST CONDITION
V_CB=30V, I_E=0
V_EB=5V, I_C=0
I_C=10mA, I_B=0
I_E=1mA, I_C=0
V_CE=2V, I_C=500mA
I_C=1.5A, I_B=0.03A
V_CE=2V, I_C=500mA
V_CE=2V, I_C=500mA
V_CB=10V, I_E=0, f=1MHz
MIN.
-
-
30
5
100
-
-
-
-
TYP.
-
-
-
-
-
-
-
120
13
MAX.
100
100
-
-
320
2.0
1.0
-
-
UNIT
nA
nA
V
V
V
V
MHz
pF
1996. 9. 14
Revision No : 1
1/2